2016-12-07 - University of New South Wales

Perovskite solar cell breaks 12.1% efficiency record

The 12.1% rating was for a 16cm2 perovskite solar cell, the largest single perovskite PV cell certified with the highest…

2016-11-30 - Vivek Nanda

NTU 3D prints ready-to-fly drone

Researchers at Nanyang Technological University have 3D printed an operational drone with all the electronics in place.

2016-11-25 - Holst Centre

High-speed deposition improves display production

Holst Centre has shown that sALD can deliver semiconductor layers with better performance than physical vapour deposition at the same…

2016-11-22 - Natcore Technology

Structural change ups solar cell efficiency to 19.4%

Reducing resistance from laser-formed contacts and damage from laser process has helped increase efficiency.

2016-11-10 - Fujitsu

AI model recognises handwritten Chinese characters

When benchmarked against a database of handwritten Chinese released in 2010 the technology achieved recognition accuracy of 96.3%.

2016-11-09 - Julien Happich

QD patterning process eases display production

South Korean researchers have demonstrated a large-scale, high-resolution quantum dot patterning process to ease production of QD displays and photonic…

2016-11-07 - Korea Advanced Institute of Science and Technology

Researchers turn on magnetism in non-magnetic materials

Researchers have induced non-magnetic materials to become magnetic using an electric field, opening potential for magnetoelectric as well as thermoelectric…

2016-10-24 - R. Colin Johnson

Extending Moore’s Law using oxygen layers in CMOS

The Mears Silicon Technology can be applied at any node—from legacy 180nm nodes to mainstream 28nm nodes to the most…

2016-10-18 - Peter Clarke

Start-up secures funding for sub-treshold processors

Minima provides a middleware stack with its hardware that provides compatibility with dynamic voltage and frequency scaling (DVFS) regimes.

- Graham Prophet

Thin, flexible ICs fit into smart packaging

The technology is built around a planar nano-transistor, in which the conducting channel and gate structure are co-planar.