54nm 1Gbit DDR3 cuts power use

Hynix Semiconductor Inc. has released its second generation 1Gbit DDR3 using 54nm process technology. The new 1Gbit DDR3 is offered in x4 (H5TQ1G43TFR) and x8 (H5TQ1G83TFR) organizations. The device’s design modifications reduce power consumption of the device over the previous generation.

The new product operates at 1.5V power supply the same as the existing 1Gbit DDR3 product, but it reduces power consumption by 30 percent over the existing one. It is the highest performing memory in the industry among 1Gbit density category. According to market research firm iSuppli, 1Gbit DDR3 holds 87 percent of the market for memory. iSuppli estimates that higher density memories will account for more than 50 percent of the market by 2011.

By introducing this eco-friendly product which has features of reducing power consumption, Hynix expects to respond to the customer demand for featuring lower level of power consumption. Highly virtualized applications such as data centers, servers and supercomputers as well as mobile applications requiring longer battery life could take advantage of this product to enable reduction of power consumption.

The design philosophy adopted on the second-generation 1Gbit DDR3, will also be applied to future design of DRAM components including 2Gbit DDR3 with 40nm-class technology.

The product is now being produced in mass volume.

For application notes on DDR3 click here.