The ISOW7841 reduces device operating temperature by up to 40°C, resulting in higher power delivery and higher channel count, according…
Weltrend’s WT6615F and WT6632F USB power delivery controllers support from 3V up to 30V range without an external LDO.
UMC’s 14nm FinFET wafers feature 55% higher speed and twice the gate density over 28nm process technology.
Molex’s Nano-Fit power connectors have multiple colour and mechanical keying options to help designers reduce the risk of cross mating.
The TVS diodes are fabricated with EAP-IV process that utilises Toshiba’s snapback technology for improved system reliability.
Rohm's third generation of SiC MOSFETs, SBDs and modules features switching capability, energy conversion efficiency, reduced on-resistance.
AmP represents an FPGA-style approach to building power management ICs that can address about 90% of the topologies of power…
AnDapt's line of configurable ICs combines power MOSFETs, analog and digital circuitry and can be used to create a wide…
Toshiba has used its U-MOS IX-H series trench process to deliver efficiency across a wide range of load conditions by…
The LDBL20’s bumpless package breaks through the minimum I/O-area and height limitation imposed by the diameter of traditional flip-chip solder…