SiC-based MOSFETs offer dramatic benefits in automotive, power applications

Sponsor : STMicroelectronics (ST)
SiC-based MOSFETs offer dramatic benefits in automotive, power applications

As conventional silicon-based MOSFETs mature, they are now reaching their theoretical limits of performance. Wide band-gap semiconductor devices represent an interesting alternative for improving performance due to their electrical, thermal, and mechanical properties.

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