Toshiba builds memory fab, R&D centre in Japan

Article By : Toshiba

Fab 6 will be dedicated to production of BiCS FLASH, Toshiba's 3D Flash memory, according to the company.

Toshiba has started the construction of a new semiconductor fabrication facility, Fab 6, and a new R&D centre for its memory business at its main memory production base, the Yokkaichi Operations in Mie prefecture.

Fab 6 will be dedicated to production of BiCS FLASH, Toshiba's 3D Flash memory. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimised against market trends, with completion of Phase 1 scheduled for summer 2018. Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.

Toshiba's memory R&D centre will be built adjacent to the new fab, with completion targeting December 2017. The facility will advance development of BiCS FLASH and new memories, according to the company.