The device offers a low voltage coefficient of 0.1ppm/V, power dissipation ratings from 150mW to 1W and 75V to 200V…
France-based IPDiA specialises in developing integrated passive devices, including 3D silicon capacitors.
Compared to three-terminal CMOS synaptic circuits, the two-terminal device doesn't require complex circuitry to simulate synaptic behaviour.
The MAF1005G can suppress the spurious emissions from cellular bands by up to 50dB.
Littelfuse also plans to invest approximately $30 million in its semiconductor fabrication locations to enhance its production capabilities.
Technavio lists the prominent vendors that are expected to impact the global electrical resistors market.
These MOSFETs represent low-current supplements to Toshiba’s existing DTMOS IV line-up of 800V superjunction DTMOS IV devices.
An 8ch sink type output is incorporated into the small surface-mounting packages, enabling space-saving control of multiple circuits.
Devices in Vishay's Draloric RCS e3 series offer better pulse load performance and ESD surge characteristics when compared to standard…