Memory spike forces IC Insights forecast rework
An unforeseen spike in DRAM and NAND flash ASPs has forced IC Insights to revise its previously slow IC market…
Light pulse flips magnetic memory cell at record speed
Magnetic tunnel junction is critical to advances beyond Moore’s law, but there is a limitation on how fast the material's…
Setting new record speed for magnetic tunnel junction
The recent advancement establishes a new means of communication between fibre optics and magnetic devices, according to researchers.
nvNITRO operates at 1.5M IOPS with 6μs latency
Initial applications for nvNITRO accelerators include “anywhere you need very fast write speeds coupled with very low latency,” according to…
Everspin’s nvNITRO targets evolving MRAM market
Initial nvNITRO accelerators will be available in capacities of a 1GB and 2GB, based on Everspin’s 256Mb DDR3 ST-MRAM.
Flash memory adopts 3b-per-cell TLC tech
Toshiba’s 64-layer device with 3b-per-cell TLC BiCS Flash Device bundles 1TB 3D flash memory capacity and performance.
MRAM development gains momentum
MRAM is a promising replacement for SRAM, DRAM and flash that are facing serious scaling challenges as the industry moves…
Is China ready for a memory chip fab?
With a lack of experienced engineers and equipment, will China’s decision to push into memory semiconductors be successful?
Rambus, Winbond sign 5-year patent agreement
The collaborative partnership aims to provide critical memory and interface technologies for data centres.
Crossbar ReRAM chases terabyte non-volatile memory
The ReRAM is showing advantages over flash memory, including read latencies of 20 nanoseconds and write latencies of 12 nanoseconds.