The authors of The Fourth Terminal: Benefits of Body Biasing Techniques for FD-SOI Circuits and Systems make the case for…
Headstart over TSMC could give Samsung a leg-up in the post-FinFET era
Semiconductor gate and pitch dimensions are slowing to a stop, but researchers see ways to drive advances down to the…
Samsung announced commercial production of its first embedded MRAM (eMRAM) product based on its 28nm FD-SOI process.
Confirms it expects to use next-generation lithography technology with 7nm process next year; adds 11nm low power plus process to…