High-side MOSFET driver operates up to 150V

Article By : EE Times Asia

The LTC7001’s 1Ω gate driver can drive large gate capacitance MOSFETs with short transition times and 35ns propagation delays, according to Analog Devices.

Analog Devices has introduced a high-speed driver designed to receive a ground-referenced, low voltage digital input signal and quickly drive a high side N-channel power MOSFET whose drain can be between 0V and 135V (150V abs max).

The LTC7001 has an internal charge pump that is fully enhances an external N-channel MOSFET switch, enabling it to remain on indefinitely. The LTC7001’s 1Ω gate driver can drive large gate capacitance MOSFETs with short transition times and 35ns propagation delays, well suited for both high frequency switching and static switch applications, according to the company.

The LTC7001 operates from a 3.5V to 15V driver bias supply range with an adjustable undervoltage lockout. The fast 13ns rise and fall times, when driving a 1000pF load, minimise switching losses. Other features include an adjustable turn-on slew rate and an adjustable overvoltage lockout.

The LTC7001 is available in the MSOP-10 package with the leads configured for high voltage spacing. It is available in three operating junction temperature grades of extended and industrial versions from -40 to 125°C, high temperature automotive version from -40°C to 150°C and a military grade from -55°C to 150°C.

The 1,000-piece price starts at $2.40 each.